Statistical Characterization of Time-Dependent Variability Defects Using the Maximum Current Fluctuation

نویسندگان

چکیده

This article presents a new methodology to extract, at given operation condition, the statistical distribution of number active defects that contribute observed device time-dependent variability, as well their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis thousands current traces, proposed approach uses simpler trace processing, since only maximum minimum values drain during time interval are needed. Moreover, this extraction method can also estimate causing small shifts, which be very identify by means. Experimental data in wide range gate voltages, from near-threshold up nominal conditions, analyzed with methodology.

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ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 2021

ISSN: ['0018-9383', '1557-9646']

DOI: https://doi.org/10.1109/ted.2021.3086448